silicon npn triple diffused planar transistor (high voltage and high speed switchihg transistor) application : switching regulator and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 500 400 10 18( pulse 36) 6 130(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 100 max 400 min 10 to 30 0.5 max 1.3 max 10 typ 165 typ unit m a m a v v v mhz pf conditions v cb =500v v eb =10v i c =25ma v ce =4v, i c =10a i c =10a, i b =2a i c =10a, i b =2a v ce =12v, i e =?.0a v cb =10v, f=1mhz 2sc4140 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) t on ? stg ? f i c characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat),v be (sat) i c temperature characteristics (typical) pc ta derating reverse bias safe operating area safe operating area (single pulse) 0 0 8 4 12 16 18 2 134 collector-emitter voltage v ce (v) collector current i c (a) 800ma 1.2a 600ma 400ma 200ma 1.6a i b =100ma 0.02 0.1 0.05 1 5 10 18 0.5 0 1 1.4 collector-emitter saturation voltage v ce(sat) (v) base-emitter saturation voltage v be(sat) (v) (i c /i b =5) collector current i c (a) v be (sat) 125?c (case temp) 25?c (case temp) ?5?c (case temp) 25?c ?5?c v ce (sat) 1 2 5 ? c ( c a s e t e m p ) 1 0.2 0.5 10 18 5 0.1 0.5 5 10 1 switching time t on t stg t f ( s) collector current i c (a) t stg t on t f v cc 200v i c :i b1 :? b2 =10:1:2 0.1 1 2 0.5 1 10 100 1000 time t(ms) transient thermal resistance q j-a (?c/w) 130 100 50 3.5 0 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 0 25 50 75 100 125 150 10 50 5 500 100 1 0.5 0.03 0.1 0.05 10 50 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling l=3mh i b2 =?.5a duty:less than 1% 10 50 5 100 500 0.05 0.03 5 1 0.5 0.1 10 50 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling 100 s 10ms 1ms dc 0.02 0.1 0.05 1 18 10 5 0.5 5 10 50 collector current i c (a) dc current gain h fe (v ce =4v) 125?c 25?c ?5?c 0 18 8 4 16 12 0 1.2 0.4 0.6 0.8 1.0 0.2 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) ?5?c (case temp) 25?c (case temp) n typical switching characteristics (common emitter) v cc (v) 200 r l ( ) 20 i c (a) 10 v bb2 (v) ? i b2 (a) ? t on ( m s) 1 max t stg ( m s) 3 max t f ( m s) 0.5 max i b1 (a) 1 v bb1 (v) 10 external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 6.0g a. part no. b. lot no. 93
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